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NTE172A Silicon NPN Transistor Darlington Preamp, Medium Speed Switch
Description: The NTE172A is a silicon NPN Darlington transistor in a TO92 type case designed for preamplifier input stages requiring input impedances of several megohms or extremely low level, high gain, low noise amplifier applications. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Lead Temperature (During Soldering, 1/16" 1/32" from case for 10sec max.), TL . . . . . . . . +260C Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2% Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Static Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain V(BR)CBO IC = 0.1A, IE = 0 V(BR)CEO IC = 10mA, IB = 0 V(BR)EBO IE = 0.1A, IE = 0 hFE ICBO VCE = 5V, IC = 2mA VCE = 5V, IC = 100mA Collector Cutoff Current VCB = 40V, IE = 0 VCB = 40V, IE = 0, TA = +100C 40 40 12 7000 20000 - - - - - - - - - - - - 70000 - 100 20 nA A V V V Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Parameter Static Characteristics (Cont'd) Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Dynamic Characteristics Small-Signal Current Gain Current Gain-High Frequency Current Gain-Bandwidth Product Input Impedance Collector-Base Capacitance Emitter Capacitance Noise Voltage hfe |hfe| fT hie Ccb Ceb en VCE = 5V, IC = 2mA, f = 1kHz VCE = 5V, IC = 2mA, f = 1kHz VCE = 5V, IC = 2mA, f = 10MHz VCE = 5V, IC = 2mA, f = 1kHz VCB = 10V, f = 1MHz VEB = 0.5V, f = 1MHz IC = 0.6mA, VCE = 5V, RG = 160k, f = 10Hz to 10kHz, B.W. = 15.7kHz 7000 15.6 60 - - - - - - - 650 7.6 10.5 195 - - - - 10.0 - 230 dB MHz k pF pF nV/pHz IEBO VCE(sat) VBE(sat) VBE VEB = 12V, IC = 0 IC = 200mA, IB = 0.2mA IC = 200mA, IB = 0.2mA VCE = 5V, IC = 200mA - - - - - - - - 100 1.4 1.6 1.5 nA V V V Symbol Test Conditions Min Typ Max Unit
.135 (3.45) Min
C B
.210 (5.33) Max
Seating Plane
E
.500 (12.7) Min
.021 (.445) Dia Max
ECB .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

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